MASSPHOTON is proud to announce that its self-developed power devices have been shortlisted as finalists for the 2025 EE Awards Asia Innovation R&D Award! This prestigious recognition highlights our leading technological capabilities and innovation in the semiconductor power device industry.
Our GaN power HEMT, grown by Molecular Beam Epitaxy (MBE) on sapphire substrate, achieves a breakdown voltage exceeding 1000V. This outstanding performance is enabled by the use of an ultra-thin AlN buffer layer grown by MBE and the implementation of a single-level gate field plate technique. The MBE technique facilitates the growth of a dopant-free buffer layer, significantly enhancing the reliability of GaN power HEMTs. Meanwhile, the single-level field plate technique reduces fabrication costs while improving device reliability. These technical advantages demonstrate the strong potential of MASSPHOTON’s GaN power HEMT for high-power electronic applications.
About MASSPHOTON MASSPHOTON is committed to independent innovation and focuses on advanced semiconductor device research and manufacturing, driving technological progress and sustainable development in the power electronics industry.
